Today, three elements LEDs are commonly used as red display devices for various applications. They consist of epitaxial layers of aluminum gallium arsenide (AlGaAs) grown on a gallium arsenide (GaAs) substrate. Hitachi Cable established a revolutionary LPE (liquid phase epitaxy) growth production technology which substantially improves productivity compared to conventional technologies. We provide world-leading LED manufacturers with a selection of high-quality epitaxial wafers ranging from low- to high-intensity types at competitive prices. Our product lineup includes high-intensity epitaxial wafers for red, yellow, and green 4 elements LEDs with layers consisting of aluminum gallium indium phosphide (AlGaInP). Since the development of mass production techniques based on the MOVPE (metal-organic vapor phase epitaxy) method, we have been expanding our production capacity to meet the increasing demand for use in traffic signals and automobile-mounted equipment. Hitachi Cable has the world's largest market share of the field of epitaxial wafers for LEDs.
We have also succeeded in developing a gallium nitride substrate for blue-violet lasers. In addition to shipping substrates for LEDs, we are also shipping samples for laser applications, in response to the emerging market for laser devices for reading and writing to Blu-ray Disks, a prospective next-generation optical disc.